发明名称 |
Electron beam exposure apparatus, deflection apparatus, and electron beam exposure method |
摘要 |
An electron beam exposure apparatus for exposing a wafer by an electron beam, including: an electron beam generating section for generating the electron beam; a deflector for deflecting the electron beam; a deflection control section for outputting a deflection control signal for causing the deflector to deflect the electron beam; and a control signal storage section for storing a value of the deflection control signal output from the deflection control section. The control signal storage section and the deflector may be monolithically integrated on a semiconductor substrate.
|
申请公布号 |
US2004061080(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030672469 |
申请日期 |
2003.09.26 |
申请人 |
ADVANTEST CORPORATION;HITACHI, LTD.;CANON KABUSHIKI KAISHA |
发明人 |
HASHIMOTO SHIN-ICHI;YODA HARUO;MURAKI MASATO |
分类号 |
G03F7/20;H01J3/14;H01J37/147;H01J37/302;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01J37/302 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|