| 发明名称 |
Thin-film semiconductor device and liquid crystal display |
| 摘要 |
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate electrode electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1MV/cm to 2MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm<3 >to 1E+20/cm<3>.
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| 申请公布号 |
US2004063253(A1) |
申请公布日期 |
2004.04.01 |
| 申请号 |
US20030638398 |
申请日期 |
2003.08.12 |
| 申请人 |
NEC CORPORATION |
发明人 |
MATSUNAGA NAOKI;SERA KENJI;TAKAHASHI MITSUASA |
| 分类号 |
H01L27/08;H01L21/336;H01L21/77;H01L21/8234;H01L21/8238;H01L21/84;H01L27/088;H01L27/092;H01L27/12;H01L27/32;H01L29/49;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/08 |
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