Semiconductor memory device and current mirror circuit

摘要

A semiconductor memory device comprises memory cell array, a sense amp, and a reference voltage generator. The reference voltage generator includes a reference cell unit containing a reference cell to flow a reference current and a first current source load to supply a current to the reference cell; a reference transistor unit containing a reference transistor to flow a current reflecting the reference current and a second current source load to supply a current to the reference transistor; a control amp for negative feedback control of the reference transistor; a current source transistor; and a third current source load connected to a reference sense line.