发明名称 TANTALUM SPUTTERING TARGET AND METHOD FOR PREPARATION THEREOF
摘要 <p>A tantalum spattering target which has a crystal structure wherein the (222) orientation is preferred toward the central face thereof from the position of 10 % of the thickness thereof; and a method for preparing the tantalum spattering target which comprises providing a tantalum ingot or billet formed by melting and casting, and subjecting the tantalum ingot or billet to forging and recrystallization annealing, followed by rolling, to form a crystal structure wherein the (222) orientation is preferred toward the central face of the ingot or billet from the position of 10 % of the thickness thereof. The spattering target allows the formation of a film exhibiting good uniformity and thus having improved quality.</p>
申请公布号 WO2004027109(A1) 申请公布日期 2004.04.01
申请号 WO2003JP09575 申请日期 2003.07.29
申请人 NIKKO MATERIALS CO., LTD.;ODA, KUNIHIRO 发明人 ODA, KUNIHIRO
分类号 B21J1/02;C22F1/00;C22F1/18;C23C14/34;(IPC1-7):C23C14/34 主分类号 B21J1/02
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