发明名称 Optically pumped semiconducting laser device has radiation emitting zone at first temperature, vertical emitter's radiation emitting zone at second, higher temperature when pump laser operating
摘要 The optically pumped semiconducting laser has a vertical emitter (2) and at least one pump laser (5) for optically pumping the vertical emitter, whereby the vertical emitter and pump laser are monolithically integrated. When the pump laser is operating, a radiation emitting zone (6) is at a first temperature and the vertical emitter has a radiation emitting zone (3) at a second, higher temperature.
申请公布号 DE10243545(A1) 申请公布日期 2004.04.01
申请号 DE20021043545 申请日期 2002.09.19
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 ALBRECHT, TONY;SCHMID, WOLFGANG
分类号 H01S5/026;H01S5/04;H01S5/14;H01S5/183;(IPC1-7):H01S5/40;H01S5/34;H01S3/094 主分类号 H01S5/026
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