| 发明名称 |
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus |
| 摘要 |
A process is provided for producing an image display device which includes a thin film semiconductor device. In accordance with the process, semiconductor crystal grains are grown in a transverse direction in a semiconductor film by modulating a continuous wave laser into a pulsed laser beam and then irradiating the pulsed laser beam on the semiconductor film.
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| 申请公布号 |
US2004063337(A1) |
申请公布日期 |
2004.04.01 |
| 申请号 |
US20030670356 |
申请日期 |
2003.09.26 |
| 申请人 |
HATANO MUTSUKO;YAMAGUCHI SHINYA;KIMURA YOSHINOBU;PARK SEONG-KEE |
发明人 |
HATANO MUTSUKO;YAMAGUCHI SHINYA;KIMURA YOSHINOBU;PARK SEONG-KEE |
| 分类号 |
H01L29/786;C30B1/00;H01L21/00;H01L21/20;H01L21/26;H01L21/324;H01L21/336;H01L21/36;H01L21/42;H01L21/44;H01L21/4763;H01L21/477;H01L21/84;H01L23/62;H01L27/01;H01L27/12;H01L31/0328;H01L31/0336;H01L31/0392;H01L31/072;H01L31/109;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/786 |
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