发明名称 |
Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device |
摘要 |
A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.
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申请公布号 |
US2004061176(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030668186 |
申请日期 |
2003.09.24 |
申请人 |
TAKAFUJI YUTAKA;ITOGA TAKASHI |
发明人 |
TAKAFUJI YUTAKA;ITOGA TAKASHI |
分类号 |
H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):H01L21/00;H01L27/01;H01L31/039 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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