发明名称 |
Apparatuses and methods for treating a silicon film |
摘要 |
A method of treating a silicon film on a substrate. A silicon film is provided. The silicon film is thinned using a gas cluster ion beam (GCIB) process. The silicon film surface then is smoothed out using an etching process or an annealing process. Optionally, an encapsulation film is formed on the silicon film after the GCIB process and the etching process or the annealing process.
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申请公布号 |
US2004060899(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20020263098 |
申请日期 |
2002.10.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WALDHAUER ANN;COMITA PAUL B. |
分类号 |
H01L21/302;H01L21/306;H01L21/3065;H01L21/762;(IPC1-7):C23F1/00;C23C16/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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