METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE OBTAINED BY MEANS OF SAID METHOD

摘要

The invention relates to a method of manufacturing a semiconductor device (10) in which, in a semiconductor body (1) with a temporary substrate (2), at least one semiconductor element (3) is formed which, on a side of the semiconductor body (1) opposite to the substrate (2), is provided with at least one connection region (4), and, on the said side, a dielectric (5) is formed and patterned to leave free the connection region (4), after which a metal layer (6) is deposited over the dielectric (5) so as to be in contact with the connection region (4), which metal layer (6) serves as an electric connection conductor of the connection region (4), after which the temporary substrate (2) is removed and the metal layer (6) also serves as a substrate of the device (10). According to the invention, before the metal layer (6) is deposited, there is formed, around the patterned part of the dielectric (5) and around the semiconductor element (3), an annular region (7) of a resin having a larger thickness than the dielectric (5), and the metal layer (6) is deposited within the rectangular annular region (7). In this way, an individual device (10) can readily be formed after the metal layer (6) has been deposited, preferably by pushing the device (10) out of the region (7). Preferably, a (different) photoresist is chosen for the dielectric (5) and the region (7). The invention also comprises a semiconductor device (10) obtained in this way.