PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND PRODUCTION METHOD FOR FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR,申请号KR20047002384-传众专利搜索

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发明名称	PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND PRODUCTION METHOD FOR FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR
摘要
申请公布号	KR20040027901(A)	申请公布日期	2004.04.01
申请号	KR20047002384	申请日期	2002.08.23
申请人		发明人
分类号	H01L21/205;H01L21/336;H01L21/20;H01L21/337;H01L29/10;H01L29/165;H01L29/78	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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