发明名称 |
Control of plasma density with broadband RF sensor |
摘要 |
A plasma processing system has a chamber, a workpiece holder in an interior of the chamber, a first power circuit, a second power circuit, and a feedback circuit. The first power circuit has a first power supply coupled to a first matching network. The first matching network is coupled to a coil adjacent to the chamber. The second power circuit has a second power supply coupled to a second matching network. The second matching network is coupled to the workpiece holder. The feedback circuit includes a radio frequency (RF) probe and a controller. The RF probe is partially disposed in an interior of the chamber. The controller is coupled to the RF probe and the first power circuit. The RF probe measures a change in plasma density in the interior of the chamber and the controller adjusts the first power supply in response to the change in plasma density.
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申请公布号 |
US2004060660(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030672475 |
申请日期 |
2003.09.25 |
申请人 |
LAM RESEARCH INC., A DELAWARE CORPORATION |
发明人 |
KLIMECKY PETE I.;TERRY FRED L.;GRIZZLE JESSY W.;GARVIN CRAIG |
分类号 |
H01J37/32;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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