发明名称 Control of plasma density with broadband RF sensor
摘要 A plasma processing system has a chamber, a workpiece holder in an interior of the chamber, a first power circuit, a second power circuit, and a feedback circuit. The first power circuit has a first power supply coupled to a first matching network. The first matching network is coupled to a coil adjacent to the chamber. The second power circuit has a second power supply coupled to a second matching network. The second matching network is coupled to the workpiece holder. The feedback circuit includes a radio frequency (RF) probe and a controller. The RF probe is partially disposed in an interior of the chamber. The controller is coupled to the RF probe and the first power circuit. The RF probe measures a change in plasma density in the interior of the chamber and the controller adjusts the first power supply in response to the change in plasma density.
申请公布号 US2004060660(A1) 申请公布日期 2004.04.01
申请号 US20030672475 申请日期 2003.09.25
申请人 LAM RESEARCH INC., A DELAWARE CORPORATION 发明人 KLIMECKY PETE I.;TERRY FRED L.;GRIZZLE JESSY W.;GARVIN CRAIG
分类号 H01J37/32;H01L21/306;(IPC1-7):H01L21/306 主分类号 H01J37/32
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