发明名称 |
Semiconductor device and method of fabricating thereof |
摘要 |
To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped difference in at least one layer of a matrix insulating film among a plurality of matrix insulating films having refractive indices different from each other. By irradiating laser beam from a rear face side of a substrate (or both sides of a surface side and the rear face side of the substrate), there is formed an effective intensity distribution of laser beam with regard to a semiconductor film and there is produced a temperature gradient in correspondence with a shape of the stepped difference and a distribution of the film thickness of the matrix insulating film in the semiconductor film. By utilizing thereof, a location of producing lateral growth and a direction thereof can be controlled to thereby enable to provide crystal grains having large particle sizes.
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申请公布号 |
US2004063258(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030678084 |
申请日期 |
2003.10.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KASAHARA KENJI;KAWASAKI RITSUKO;OHTANI HISASHI |
分类号 |
G02F1/1362;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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