发明名称 |
Method of forming dummy wafer |
摘要 |
According to the present invention, a dummy wafer is formed by forming a masking film on a rear surface of a silicon wafer; spray coating aluminum and depositing an aluminum film on a front surface of the silicon wafer; spray coating ceramics or carbon and depositing a ceramic film or carbon film on the aluminum film so that the aluminum film may be completely covered; and removing the masking film formed on the rear surface. Also, a dummy wafer can be formed by using an aluminum wafer as a wafer substrate and subjecting it to anodic oxidation to form a film of aluminum oxide.
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申请公布号 |
US2004063324(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030667511 |
申请日期 |
2003.09.23 |
申请人 |
MIYAMORI YUICHIRO;HIDAKA MUNENORI;YOSHIDA MASASHI |
发明人 |
MIYAMORI YUICHIRO;HIDAKA MUNENORI;YOSHIDA MASASHI |
分类号 |
C23C4/00;C23C4/02;C23C4/18;H01L21/316;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C23C4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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