Production of a semiconductor structure used in electronic devices comprises preparing a semiconductor structure having a trench, filling the trench with a filling, planarizing the filling, and sinking the filling in the trench

摘要

Production of a semiconductor structure comprises preparing a semiconductor structure (1) having a trench (2), filling the trench with a filling (10) so that the filling protrudes over a surface (OF) of the semiconductor structure by a first height and fills the trench and the periphery of the trench, planarizing the filling in a first etching step, and sinking the filling in the trench in a second etching step to a prescribed depth. The same plasma power and etching agent composition are used for both etching steps.