发明名称 |
APPARATUS FOR DRIVING WORD LINE OF SEMICONDUCTOR MEMORY DEVICE AND METHOD THEREOF AT LOW VOLTAGE STABLY |
摘要 |
PURPOSE: An apparatus for driving a word line of a semiconductor memory device and a method thereof are provided, which operate at a low voltage stably by preventing the word line from being selected during a write operation, by disabling a word line enable signal. CONSTITUTION: According to the apparatus for driving a word line of a semiconductor memory device controlled by a number of control signals including an address signal and a data signal and a write enable signal and a chip selection signal, a decoding unit(402) decodes the address signal and generates a decode signal to determine a memory cell to access. A pulse signal generation unit(404) generates a pulse signal in response to the control signal. A sensing signal generation unit(400) is enabled by one of the control signals, and generates a sensing signal disabled in response as the write enable signal is disabled. And a word line enable signal generation unit(406) generates a word line enable signal by receiving the pulse signal and the sensing signal and a decoding signal of the address.
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申请公布号 |
KR100427033(B1) |
申请公布日期 |
2004.04.01 |
申请号 |
KR19960076402 |
申请日期 |
1996.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
BAEK, BO HEUM;RYU, DEOK HYEON |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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地址 |
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