发明名称 APPARATUS FOR DRIVING WORD LINE OF SEMICONDUCTOR MEMORY DEVICE AND METHOD THEREOF AT LOW VOLTAGE STABLY
摘要 PURPOSE: An apparatus for driving a word line of a semiconductor memory device and a method thereof are provided, which operate at a low voltage stably by preventing the word line from being selected during a write operation, by disabling a word line enable signal. CONSTITUTION: According to the apparatus for driving a word line of a semiconductor memory device controlled by a number of control signals including an address signal and a data signal and a write enable signal and a chip selection signal, a decoding unit(402) decodes the address signal and generates a decode signal to determine a memory cell to access. A pulse signal generation unit(404) generates a pulse signal in response to the control signal. A sensing signal generation unit(400) is enabled by one of the control signals, and generates a sensing signal disabled in response as the write enable signal is disabled. And a word line enable signal generation unit(406) generates a word line enable signal by receiving the pulse signal and the sensing signal and a decoding signal of the address.
申请公布号 KR100427033(B1) 申请公布日期 2004.04.01
申请号 KR19960076402 申请日期 1996.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAEK, BO HEUM;RYU, DEOK HYEON
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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