| 摘要 |
PURPOSE: A method for removing polymers of a semiconductor device is provided to be capable of effectively removing polymers by using CHF3 gas. CONSTITUTION: An aluminum film is formed on a silicon substrate(1) having a dense and non-dense pattern region. An aluminum pattern(2a) is formed by dry-etching the aluminum film using a photoresist pattern and CHF3 gas. The photoresist pattern is removed. At this time, polymers(4) are generated on the surface of the aluminum pattern(2a). The polymers are removed by first cleaning. Also, carbon-rich polymers generated on the non-dense pattern region are changed to C-O coupling polymers by irradiating UV light. The C-O coupling polymers are removed by second cleaning.
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