发明名称 |
Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics |
摘要 |
A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.
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申请公布号 |
US2004063293(A1) |
申请公布日期 |
2004.04.01 |
申请号 |
US20030676171 |
申请日期 |
2003.10.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GREENBERG DAVID R.;JAGANNATHAN BASANTH;JENG SHWU-JEN;KOCIS JOSEPH T.;RAMAC SAMUEL C.;ROCKWELL DAVID M. |
分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L21/331;H01L21/822 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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