ACICULAR SILICON CRYSTAL AND PROCESS FOR PRODUCING THE SAME

摘要

An acicular silicon crystal and a process for producing the same. In particular, an acicular silicon crystal having a peaked configuration of nanosize, used advantageously in nanotechnology; and a process for producing the same wherein immense quantities of such acicular silicon crystals can be formed on a surface of silicon substrate. More specifically, a superfine acicular silicon crystal which is tapered so as to exhibit a radius of curvature of 1 to 20 nm at the tip thereof and which has a substantially conical peaked configuration with a basal plane diameter of 10 nm or greater and a height of 1 or more times the basal plane diameter. Such acicular silicon crystals are formed uniformly over a surface of silicon substrate in an orientation perpendicular to the substrate surface according to the plasma CVD technique performed in the presence of a catalyst. Thus, acicular silicon crystals can be formed uniformly in immense quantities on a desired place with high reproducibility.