CHEMICAL MECHANICAL POLISHING APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A chemical mechanical polishing(CMP) apparatus for fabricating a semiconductor device is provided to improve polishing uniformity of a wafer by supplying gas at regular intervals through at least two first lines such that the gas presses a membrane at an early stage of a polishing process. CONSTITUTION: A polishing pad is capable of rotating. A polishing head for polishing a substrate is formed on the polishing pad. Holes are formed in a lower supporter(240). An upper supporter(250) supplies a gas induction space to a gap between the lower supporter and the upper supporter, located on the lower supporter. The membrane(210) presses the substrate by using the gas supplied from the gas induction space through the holes of the lower supporter, coating the lower supporter to be capable of being separated from the lower surface of the lower supporter. The gas is induced to the gas induction space through at least two first lines to supply uniform pressure to the entire surface of the membrane. The polishing head includes the lower supporter, the upper supporter and the membrane.