发明名称 Fuse arrangement and semiconductor memory device
摘要 <p>The arrangement has two fuses (101, 102) with respective ends. One of the ends of the fuse (101) is spaced by one interval from one of the ends of the fuse (102). The other end of the fuse (101) is spaced by another interval from the other end of the fuse (102). The former ends of the two fuses have widths narrower than or identical to widths of the latter ends of the fuses. An independent claim is also included for a semiconductor memory device.</p>
申请公布号 EP1403924(A2) 申请公布日期 2004.03.31
申请号 EP20030020991 申请日期 2003.09.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG-SEOK;CHOI, JONG-HYUN;HWANG, SANG-KI
分类号 H01L21/82;G11C29/00;H01L21/8242;H01L23/525;H01L27/10;H01L27/108;(IPC1-7):H01L23/525 主分类号 H01L21/82
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