Semiconductor light emitting diode

摘要

A semiconductor light-emitting diode (LED) comprises a transparent first conductivity type gallium phosphide substrate having a first surface bonded to a bonding surface of a first conductivity type clad layer of epitaxial growth layers. An area of the bonding surface of the first conductivity type clad layer is smaller than the first surface of the substrate to locally expose the first surface or the bond layer. A semiconductor light-emitting diode comprises epitaxial growth layers including a first conductivity type clad layer (104), an active layer (105) made of an indium gallium aluminum phosphide (InGaAlP) compound semiconductor on the clad layer to generate light and a second conductivity type clad layer (106) formed on the active layer; and a transparent first conductivity type gallium phosphide (GaP) substrate (101) with a thickness of >=150 mu m and having a first surface. The first surface has an area of >=0.1 mm 2>. It is bonded to a bonding surface of the first conductivity type clad layer via no layer or via a bond layer (102, 103). An area of the bonding surface of the first conductivity type clad layer is smaller than the first surface of the substrate to locally expose the first surface or the bond layer.