发明名称 |
Magnetic memory device and method of manufacturing the same |
摘要 |
<p>The device has a magnetoresistance unit to store information. A wiring is provided along a direction to apply a magnetic field to the magnetoresistance unit. A surface faces the magnetoresistance unit and another surface is placed opposite to the former surface. The former surface is in smaller width than the latter surface. The cross-section of the wirings is larger to their lateral dimension. An independent claim is also included for a method of manufacturing a magnetic memory device.</p> |
申请公布号 |
EP1403919(A2) |
申请公布日期 |
2004.03.31 |
申请号 |
EP20020027666 |
申请日期 |
2002.12.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUZUMI, YOSHIAKI |
分类号 |
H01L21/8247;H01L27/105;G11C11/15;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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