发明名称 Magnetic memory device and method of manufacturing the same
摘要 <p>The device has a magnetoresistance unit to store information. A wiring is provided along a direction to apply a magnetic field to the magnetoresistance unit. A surface faces the magnetoresistance unit and another surface is placed opposite to the former surface. The former surface is in smaller width than the latter surface. The cross-section of the wirings is larger to their lateral dimension. An independent claim is also included for a method of manufacturing a magnetic memory device.</p>
申请公布号 EP1403919(A2) 申请公布日期 2004.03.31
申请号 EP20020027666 申请日期 2002.12.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUKUZUMI, YOSHIAKI
分类号 H01L21/8247;H01L27/105;G11C11/15;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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