Process for manufactoring integrated resistive elements with silicidation protection

摘要

Integrated resistors are fabricated by delimiting, in a semiconductor wafer (10), at least one active area; and forming, in the active area, resistive region(s) having a pre-set resistivity. On top of the active area, a delimitation structure is formed for delimiting the resistive region. Protective elements, which extend within the delimitation structure and cover the resistive region, are obtained.