| 发明名称 |
Semiconductor device having an esd protective circuit |
| 摘要 |
A protective circuit includes a floating gate MOSFET having a source-drain path connected between an I/O line and a source line or a ground line, a control gate connected to the I/O line and a floating gate connected to the source line or the ground line. |
| 申请公布号 |
GB2381951(B) |
申请公布日期 |
2004.03.31 |
| 申请号 |
GB20020014649 |
申请日期 |
2002.06.25 |
| 申请人 |
* NEC CORPORATION;* NEC ELECTRONICS CORPORATION |
发明人 |
MORIHISA * HIRATA;MORIHISA * HIRATA |
| 分类号 |
H01L21/8247;H01L21/336;H01L21/822;H01L21/8238;H01L23/60;H01L23/62;H01L27/02;H01L27/04;H01L27/06;H01L27/088;H01L27/092;H01L27/115;H01L29/78;H01L29/788;H01L29/792;H02H3/22;H02H7/20;H03K17/08;H03K19/003;(IPC1-7):H01L23/60 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 地址 |
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