发明名称 |
Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device |
摘要 |
<p>A resist-pattern-thickening material consists of resin and surfactant. The resist-pattern-thickening material may be water-soluble and/or alkali-soluble. Independent claims are also included for: (a) formation of resist pattern by forming a resist pattern to be thickened (3) on underlying layer (5), coating a resist-pattern-thickening material (1) to cover a surface of the resist pattern to be thickened, and forming a resist pattern (10); and (b) fabrication of semiconductor device by forming a resist pattern, and patterning the underlying layer by etching using the resist pattern.</p> |
申请公布号 |
EP1403717(A1) |
申请公布日期 |
2004.03.31 |
申请号 |
EP20030021393 |
申请日期 |
2003.09.22 |
申请人 |
FUJITSU LIMITED |
发明人 |
KOZAWA, MIWA;NOZAKI, KOJI |
分类号 |
G03F7/26;G03F7/00;G03F7/004;G03F7/40;G11B5/855;H01L21/02;H01L21/027;H01L21/311;H01L21/3213;H01L21/8242;H01L21/8247;H01L27/105;(IPC1-7):G03F7/40;H01L21/824;H01L27/115 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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