Process for manufacturing semiconductor wafers incorporating differentiated isolating structures

摘要

The process involves opening trenches (8) in a substrate (2) of a semiconductor wafer (1), where the trenches delimit the conductive regions (9). Insulating sidewalls (12) are formed surrounding the trenches (8). Another set of trenches (16) are opened to delimit the conductive regions (17), and the trenches (16) are surrounded by insulating sidewalls (19), where the trenches have different depths. An independent claim is also included for a semiconductor wafer including insulating structures.