Mask read-only memory and fabrication thereof

摘要

A method for fabricating a Mask ROM is described, in which an ONO composite layer and a plurality of gate structures are formed on a substrate. A plurality of bit-lines are formed in the substrate between the gate structures and a plurality of word-lines are formed over the substrate to electrically connect with the gate structures. A chemical vapor deposition anti-reflective coating (CVD-ARC) with coding windows therein and an inter-layer dielectric layer are formed over the substrate. A coding process is then performed by using UV light to form a plurality of charged coding regions in the charge trapping layer not covered by the CVD-ARC. A plurality of plugs are then formed in the coding windows.