发明名称 Substrate processing apparatus and substrate processing method
摘要 A humidifying heat treating unit for heating a wafer W having a coated film such as a dielectric film formed thereon under a humidified atmosphere comprises a hot plate for heating the wafer W, a chamber having a plurality of blocks, and provided with a gas supply port for supplying a humidified gas into the chamber and an exhaust port exhausting the chamber for every block, and a control section for controlling the supply-exhaust of the humidified gas into and out of the chamber. The control section controls the supply-exhaust of the humidified gas for every block.
申请公布号 US6713405(B2) 申请公布日期 2004.03.30
申请号 US20030429806 申请日期 2003.05.06
申请人 TOKYO ELECTRON LIMITED 发明人 MORIYAMA HIROFUMI
分类号 H01L21/316;H01L21/00;H01L21/31;H01L21/312;(IPC1-7):H01L21/31;H01L21/469 主分类号 H01L21/316
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