发明名称 Thin film transistors with self-aligned transparent pixel electrode
摘要 A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.
申请公布号 US6713786(B2) 申请公布日期 2004.03.30
申请号 US20030348288 申请日期 2003.01.21
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COLGAN EVAN G.;SCHLEUPEN KAI R.;TSUJIMURA TAKATOSHI
分类号 G02F1/1362;G02F1/1368;(IPC1-7):H01L29/04 主分类号 G02F1/1362
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