发明名称 |
Method of forming a trench MOSFET with structure having increased cell density and low gate charge |
摘要 |
A trench MOSFET includes a plurality of trench segments in an upper surface of an epitaxial layer, extending through a second conductivity type region into a first conductivity type epitaxial region, segment at least partially separated from an adjacent segment by a terminating region, and the trench segments defining a plurality of polygonal body regions within the second conductivity type. A first insulating layer at least partially lines each trench and a plurality of first conductive regions are provided within the trench segments adjacent to the first layer. Each of the conductive regions is connected to an adjacent first conductive region by a connecting conductive region, overlying the terminating region, that bridges at least one of the terminating regions and a plurality of first conductivity type source regions are within upper portions of the polygonal body regions and adjacent the trench segments, the source regions positioned outside the terminating regions.
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申请公布号 |
US6713352(B2) |
申请公布日期 |
2004.03.30 |
申请号 |
US20020243849 |
申请日期 |
2002.09.13 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;SO KOON CHONG;TSUI YAN MAN |
分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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