Method of preventing resist poisoning in dual damascene structures

摘要

A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.