发明名称 Probe for direct wafer potential measurements
摘要 An apparatus for measuring the DC bias voltage of a wafer in a chamber comprises an electrical coupling, a first filter, a second filter. The electrical coupling receives a probe for measuring the DC bias voltage in the chamber. The probe is disposed within the chamber. A first filter, coupled to the electrical coupling, is disposed within the chamber. A second filter, coupled to the first filter, is disposed outside the chamber.
申请公布号 US6714033(B1) 申请公布日期 2004.03.30
申请号 US20010999648 申请日期 2001.10.31
申请人 LAM RESEARCH CORPORATION 发明人 MAKHRATCHEV KONSTANTIN;SRINIVASAN MUKUND
分类号 G01R19/00;H01J37/32;H01L23/544;(IPC1-7):G01R31/26;G01R31/02;G01R1/04 主分类号 G01R19/00
代理机构 代理人
主权项
地址