发明名称 |
Method of forming a nanometer-gate MOSFET device |
摘要 |
The nanometer-gate MOSFET device of the present invention comprises a shallow-trench-isolation structure; a pair of second conductive sidewall spacers being formed over each inner sidewall of a gate region and on a portion of a first conductive layer and a first raised field-oxide layers for forming an implant region in a central portion of a channel; a buffer-oxide layer being formed over each sidewall of the gate region for forming lightly-doped source/drain diffusion regions; a first sidewall dielectric spacer being formed over each sidewall of the buffer-oxide layers for forming heavily-doped source/drain diffusion regions; a second sidewall dielectric spacer being formed over each sidewall of the first sidewall dielectric spacers for forming a metal-silicide layer over each of heavily-doped source/drain diffusion regions; and a highly conductive-gate structure being formed in the gate region.
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申请公布号 |
US6713393(B2) |
申请公布日期 |
2004.03.30 |
申请号 |
US20020175102 |
申请日期 |
2002.06.20 |
申请人 |
INTELLIGENT SOURCES DEVELOPMENT CORP. |
发明人 |
WU CHING-YUAN |
分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L29/49;(IPC1-7):H01L21/302;H01L21/306;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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