发明名称 |
Method of forming a bottle-shaped trench in a semiconductor substrate |
摘要 |
A method of forming a bottle-shaped trench in a semiconductor substrate. The method is suitable for formation of the capacitor of DRAM. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. A nitride film is then formed on the top portion of the trench. Next, the semiconductor substrate is etched through the bottom portion of the trench by a solution of hydrogen peroxide and hydrofluoric acid as the etchant to form a bottle-shaped trench followed by removal of the nitride film.
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申请公布号 |
US6713341(B2) |
申请公布日期 |
2004.03.30 |
申请号 |
US20020162156 |
申请日期 |
2002.06.03 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHEN YI-NAN;LIU HSIEN-WEN;TSAI HSIN-CHUAN |
分类号 |
H01L21/334;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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