| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve compatible memory cell structures, and form different memory cell structure types on a single substrate. CONSTITUTION: The semiconductor memory device includes an NVRAM cell structure, a DRAM cell structure, and a SRAM cell structure. The NVRAM cell structure includes a source region(20) and a drain region(22) formed in a substrate(24). Again, shallow trench isolation regions(26 and 28) are provided in the substrate adjacent the source and drain regions, respectively.
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