| 摘要 |
A method for testing a semiconductor memory device according to one embodiment comprises the steps of: checking data in all addresses of the semiconductor memory device for correctness in-units of mxn bits: ending if it is determined that data in all the semiconductor memory device; if there is a defective address, comparing each m-bit data constituting the (mxn)-bit data corresponding to the defective address with its expected value; and if the comparison result indicates that the m-bit data is erroneous, determining whether the defective semiconductor memory device can be repaired. Due to this step, man hours required for testing a semiconductor memory device having a wide data bus of an (mxn)-bit width can be considerably reduced.
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