发明名称 Protection configuration for schottky diode
摘要 A protection device for a Schottky diode is described. The protection device has a cascade circuit with at least two Si-PIN diodes provided parallel to the Schottky diode. The protection device protects against momentary over-current pulses reliably and without a high outlay in terms of cost and necessary materials for forming the protection device.
申请公布号 US6714397(B2) 申请公布日期 2004.03.30
申请号 US20020213419 申请日期 2002.08.05
申请人 INFINEON TECHNOLOGIES AG 发明人 MAUDER ANTON;RUPP ROLAND;GRIEBL ERICH
分类号 H01L29/872;H01L21/822;H01L27/02;H01L27/04;H01L29/47;H01L29/861;(IPC1-7):H02H9/08 主分类号 H01L29/872
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