发明名称 Semiconductor memory device having preamplifier with improved data propagation speed
摘要 A preamplifier includes an amplifier circuit amplifying a signal level of read data, a latency shifter outputting the read data onto a data line pair in response to an internal signal determining a timing of outputting the read data onto the data bus pair, and a driver outputting the read data onto the data bus pair. The amplifier circuit receives the internal signal and outputs the read data onto the data line pair while bypassing the latency shifter when the internal signal is already at high level at the timing when the signal level of the read data is amplified. As a result, a semiconductor memory device can speed up propagation of the read data from the preamplifier onto the data bus pair in a high frequency operation.
申请公布号 US6714471(B2) 申请公布日期 2004.03.30
申请号 US20020270653 申请日期 2002.10.16
申请人 RENESAS TECHNOLOGY CORP. 发明人 KONO TAKASHI
分类号 G11C11/409;G11C7/10;G11C11/407;G11C11/4096;(IPC1-7):G11C7/00 主分类号 G11C11/409
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