发明名称 FORMING METHOD OF FUNCTIONAL THIN FILM
摘要 PURPOSE: To provide a method of simply forming a pattern of a functional thin film having high precision, even in the case that the functional thin film forming material does not have radiosensitivity, or that the functional thin film is difficult to apply an etching, or that the functional thin film is difficult to form by evaporation, and to provide a base material having the pattern of the functional thin film obtained by the above method. CONSTITUTION: The forming method of functional thin film having an intended pattern includes (1) a process of forming a pattern reverse to the pattern of the functional thin film by radiosensitive resin component, (2) a process of forming the functional thin film covering the whole part of the pattern and the surface of a base plate by applying liquid component containing functional ingredient to the surface of the base plate having the reversed pattern, and drying it, and (3) a process of obtaining the intended pattern of the functional thin film, by removing the radiosensitive resin component of the reversed pattern together with the functional thin film formed on the resin component by treating the base plate on which, the functional thin film is formed by release agent.
申请公布号 KR20040026097(A) 申请公布日期 2004.03.27
申请号 KR20030036310 申请日期 2003.06.05
申请人 NAGASE & CO., LTD.;NAGASE CHEMTEX CORPORATION 发明人 MORITA YOSHIYUKI;KITANO KEI;CHIKUSA YASUO
分类号 H05K1/09;G03F7/00;H01B13/00;H01J9/02;H05K3/02;(IPC1-7):G03F7/00 主分类号 H05K1/09
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