CURING RESIN COMPOSITION FOR SEMICONDUCTOR LASER AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION

摘要

PURPOSE: To provide a curing resin composition for semiconductor laser. CONSTITUTION: A resist pattern forming method comprises a step (1) for forming a photosensitive coating film by applying the curing resin composition for the semiconductor laser on a base material, a step (2) for irradiating and curing the surface of the photosensitive coating film formed on the base material directly with a laser beam or with a light beam through a negative mask so that a desired resist coating film (an image) can be obtained thereon and a step (3) for forming the resist pattern on the base material by subjecting the resist coating film formed in the step (2) to development treatment. The curing resin composition for the semiconductor laser is characterized by containing a bisacylphosphine oxide as a photopolymerization initiator and also it is characterized in that visible light beams from which light beams having <=440 nm wavelength in the emission spectrum of a light source are removed is used as safety light beams in at least one step of the steps from the step (1) to the step (3).