| 摘要 |
<p>PURPOSE: To provide an apparatus for crystallization which produces a crystal nucleus at a desired position and produces a large-diameter crystallized semiconductor film by attaining good lateral growth from the crystal nucleus. CONSTITUTION: The crystallization apparatus is provided with a lighting system 2 for lighting a phase shift mask 1, and produces a crystallized semiconductor film by irradiating a semiconductor film 4 with light having light intensity distribution of a reverse peak pattern whose light intensity is the lowest in the region corresponding to a phase shift portion of the phase shift mask. The apparatus is also provided with an imaging optical system 3 having image side numerical aperture set at a value required for generating the light intensity distribution of the reverse peak pattern, for establishing an optically conjugate relation between the semiconductor film and the phase shift mask. The phase shift mask is provided with a boundary region, and a first region and a second region which are arranged on both sides of the boundary region respectively, with a predetermined phase difference. The boundary region has a phase distribution that changes from the phase of the first region to the phase of the second region.</p> |
