| 摘要 |
PURPOSE: To solve the problem that, when a wiring layer having an area staddling a connecting position is formed by consecutive exposure in a semiconductor device in which wiring layers having areas astride and not astride connecting positions exist, wiring widths and inter-wiring spaces do not become advantageous than those formed by collective exposure, because a pattern is formed by taking an alignment margin into consideration. CONSTITUTION: In a method of manufacturing the semiconductor device having a plurality of wiring layers, a first wiring layer is formed in a pattern by splitting a desired pattern into a plurality of split patterns and exposing the split patterns by connecting the patterns to each other and a second wiring layer is formed in a pattern by collectively exposing the pattern.
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