发明名称 APPARATUS AND METHOD FOR FORMING THIN FILM
摘要 PURPOSE: An apparatus and a method for forming a thin film are provided to improve the uniformity of the thickness of the thin film by increasing the amount of gas from a center to an end of a substrate. CONSTITUTION: An apparatus for forming a thin film includes a gas supplying device, a power applying device, a vacuum container, and an exhausting device. The gas supplying device(2) includes a gas supply member(21) having a gas supply surface portion. The gas supply surface portion is opposed to a film-forming surface of an article to be film-covered disposed in the vacuum container(1). The power applying device(4) includes a power applying electrode(41) disposed in the vacuum container. The gas supply member has a plurality of gas supply holes(210a,210b) dispersedly formed at the gas supply surface portion. The power applying electrode is disposed in a surrounding region around a space between the article to be film-covered disposed in the vacuum container and the gas supply surface portion of the gas supply member opposed to the article.
申请公布号 KR20040025847(A) 申请公布日期 2004.03.26
申请号 KR20030065012 申请日期 2003.09.19
申请人 NISSIN ELECTRIC CO., LTD. 发明人 KIRIMURA HIROYA;KUBOTA KIYOSHI;ONODA MASATOSHI;KURATANI NAOTO
分类号 C23C16/24;C23C16/34;C23C16/40;C23C16/44;C23C16/455;C23C16/509;H01J37/32;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/24
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