发明名称 |
APPARATUS AND METHOD FOR FORMING THIN FILM |
摘要 |
PURPOSE: An apparatus and a method for forming a thin film are provided to improve the uniformity of the thickness of the thin film by increasing the amount of gas from a center to an end of a substrate. CONSTITUTION: An apparatus for forming a thin film includes a gas supplying device, a power applying device, a vacuum container, and an exhausting device. The gas supplying device(2) includes a gas supply member(21) having a gas supply surface portion. The gas supply surface portion is opposed to a film-forming surface of an article to be film-covered disposed in the vacuum container(1). The power applying device(4) includes a power applying electrode(41) disposed in the vacuum container. The gas supply member has a plurality of gas supply holes(210a,210b) dispersedly formed at the gas supply surface portion. The power applying electrode is disposed in a surrounding region around a space between the article to be film-covered disposed in the vacuum container and the gas supply surface portion of the gas supply member opposed to the article.
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申请公布号 |
KR20040025847(A) |
申请公布日期 |
2004.03.26 |
申请号 |
KR20030065012 |
申请日期 |
2003.09.19 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
KIRIMURA HIROYA;KUBOTA KIYOSHI;ONODA MASATOSHI;KURATANI NAOTO |
分类号 |
C23C16/24;C23C16/34;C23C16/40;C23C16/44;C23C16/455;C23C16/509;H01J37/32;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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