发明名称 |
CHEMICAL/MECHANICAL POLISHING SLURRY, AND CHEMICAL MECHANICAL POLISHING PROCESS AND SHALLOW TRENCH ISOLATION PROCESS EMPLOYING THE SAME |
摘要 |
<p>A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.</p> |
申请公布号 |
SG102648(A1) |
申请公布日期 |
2004.03.26 |
申请号 |
SG20010007788 |
申请日期 |
2001.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE, JONG-WON;LEE, JAE-DONG;YOON, BO-UN;HAH, SANG-ROK |
分类号 |
B24B57/02;B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/3105;(IPC1-7):C09K13/00 |
主分类号 |
B24B57/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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