| 摘要 |
PURPOSE: To provide a semiconductor device and its manufacturing method by which high reliability can be ensured by reliably connecting an emitter and a base even when a semiconductor layer is formed by a nonselective epitaxial method. CONSTITUTION: A SiGe film 9 is grown on the entire surface of a silicon oxide film 7 by a nonselective epitaxial growth method so that the inner walls of a base opening 8 may be covered. The film is grown under conditions that a bottom 9a is formed of a single crystal, other parts such as side walls 9b are polycrystal in the base opening 8 and the thickness of the side walls 9b is 1.5 times or less of the bottom 9a at the maximum. In the above nonselective epitaxial growth, monosilane, hydrogen, diborane and germane are used as raw material gas. In this case, the flow of monosilane and hydrogen is respectively 20 sccm and 20 slm. Also, the growth temperature is set at 650°C, the flow of diborane is set at 75 sccm and the flow of germane is set at 35 sccm.
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