发明名称 |
INTERFERENCE FILTER, SEMICONDUCTOR PHOTODETECTOR AND ELECTRONIC DEVICE INCLUDING THOSE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photodetector including an interference filter having an excellent heat resistance at low cost in a simple manner. SOLUTION: The semiconductor photodetector including the interference filter includes a semiconductor photodetector and the interference filer formed by a vapor deposition method using the semiconductor substrate of the photodetector as a base. The interference filter includes a plurality of high-refractive index layers and a plurality of low-refractive index layers which are alternately laminated. The high-refractive index layers consist of Ta<SB>2</SB>O<SB>5</SB>or Nb<SB>2</SB>O<SB>5</SB>and at least the major regions thereof are substantially amorphous. The low-refractive index layers comprises amorphous SiO<SB>2</SB>. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004093850(A) |
申请公布日期 |
2004.03.25 |
申请号 |
JP20020254149 |
申请日期 |
2002.08.30 |
申请人 |
SUMITOMO ELECTRIC IND LTD;TOSHIBA CORP |
发明人 |
KATAYAMA TETSUYA;NAKAYAMA SHIGERU;OKUBO SOICHIRO;OGAWA ISAO |
分类号 |
G02B5/28;H01L31/0232;(IPC1-7):G02B5/28;H01L31/023 |
主分类号 |
G02B5/28 |
代理机构 |
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