| 发明名称 |
Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask |
| 摘要 |
A method of fabricating a gate structure of a field effect transistor comprising processes of forming an alpha-carbon mask and plasma etching a gate electrode and a gate dielectric using the alpha-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.
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| 申请公布号 |
US2004058517(A1) |
申请公布日期 |
2004.03.25 |
| 申请号 |
US20030338251 |
申请日期 |
2003.01.06 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NALLAN PADMAPANI C.;KUMAR AJAY;JIN GUANGXIANG;LIU WEI |
| 分类号 |
H01L21/027;H01L21/28;H01L21/311;H01L21/3213;(IPC1-7):H01L21/320;H01L21/476;H01L21/302;H01L21/461 |
主分类号 |
H01L21/027 |
| 代理机构 |
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