发明名称 Magnetic random access memory
摘要 One end of a write word line is connected to a decoder/driver unit. The decoder/driver unit is constituted by a P channel MOS transistor, an N channel MOS transistor, and an NAND circuit. When WRITE, CHRDY and RA1 all become "H", an output signal from the NAND circuit becomes "H", and a write current flows through the write word line. CHRDY is a signal which becomes "H" upon completion of an initialization operation of all internal circuits after turning on a power supply. A limiting circuit is constituted by a clamp circuit which limits a potential of a write word line to a fixed value or a lower value.
申请公布号 US2004057277(A1) 申请公布日期 2004.03.25
申请号 US20030368456 申请日期 2003.02.20
申请人 FUJITA KATSUYUKI;IWATA YOSHIHISA 发明人 FUJITA KATSUYUKI;IWATA YOSHIHISA
分类号 G11C11/15;G11C8/08;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 主分类号 G11C11/15
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