发明名称 |
MAGNETORESISTANCE EFFECT ELEMENT AND PRODUCTION METHOD AND APPLICATION METHOD THEREFOR |
摘要 |
<p>A magnetoresistance effect element comprising a metal artificial lattice film (4) consisting of at least two layers of magnetic thin film and metal non-magnetic thin film alternately laminated on part of a substrate (1) and being formed into a specified pattern, a first protection film (5) formed to cover the metal artificial lattice film (4), and a second protection film (6) formed on the first protection film (5), wherein the first protection film (5) has a residual stress of practically zero, and the second protection film (6) consists of a material having a moisture permeation preventing power. Accordingly, the magnetoresistance effect element is free from hysteresis even in a high-temperature condition, small in characteristics deterioration, and excellent in heat resistance and corrosion resistance, and is applicable even in a rigorous environment such as an automobile.</p> |
申请公布号 |
WO2004025745(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
WO2003JP11687 |
申请日期 |
2003.09.12 |
申请人 |
HAYASHI, NOBUKAZU;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NISHIWAKI, HIDEAKI;ONAKA, KAZUHIRO |
发明人 |
NISHIWAKI, HIDEAKI;ONAKA, KAZUHIRO;HAYASHI, NOBUKAZU |
分类号 |
G01R33/09;H01F10/32;H01F41/32;(IPC1-7):H01L43/08;G11B5/39;H01L43/12 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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