发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND PRODUCTION METHOD AND APPLICATION METHOD THEREFOR
摘要 <p>A magnetoresistance effect element comprising a metal artificial lattice film (4) consisting of at least two layers of magnetic thin film and metal non-magnetic thin film alternately laminated on part of a substrate (1) and being formed into a specified pattern, a first protection film (5) formed to cover the metal artificial lattice film (4), and a second protection film (6) formed on the first protection film (5), wherein the first protection film (5) has a residual stress of practically zero, and the second protection film (6) consists of a material having a moisture permeation preventing power. Accordingly, the magnetoresistance effect element is free from hysteresis even in a high-temperature condition, small in characteristics deterioration, and excellent in heat resistance and corrosion resistance, and is applicable even in a rigorous environment such as an automobile.</p>
申请公布号 WO2004025745(A1) 申请公布日期 2004.03.25
申请号 WO2003JP11687 申请日期 2003.09.12
申请人 HAYASHI, NOBUKAZU;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NISHIWAKI, HIDEAKI;ONAKA, KAZUHIRO 发明人 NISHIWAKI, HIDEAKI;ONAKA, KAZUHIRO;HAYASHI, NOBUKAZU
分类号 G01R33/09;H01F10/32;H01F41/32;(IPC1-7):H01L43/08;G11B5/39;H01L43/12 主分类号 G01R33/09
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