发明名称 |
VERFAHREN ZUR HERSTELLUNG EINER CDTE-SCHICHT |
摘要 |
A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate. <IMAGE> |
申请公布号 |
DE69727655(D1) |
申请公布日期 |
2004.03.25 |
申请号 |
DE1997627655 |
申请日期 |
1997.05.27 |
申请人 |
MATSUSHITA BATTERY INDUSTRIAL CO. LTD., MORIGUCHI |
发明人 |
HIGUCHI, HIROSHI;KUMAZAWA, SEIJI;ARITA, TAKASHI;HANAFUSA, AKIRA;MUROZONO, MIKIO;ARAMOTO, TETSUYA |
分类号 |
C23C14/06;H01L21/363;H01L27/142;H01L31/073;H01L31/18;(IPC1-7):H01L31/18;H01L31/04;H01L31/072 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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